The effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers View on Open Library

The effect of ion implantation and impurities on the interdiffusion in Si/Ge amorphous artificial multilayers

by Byungwoo Park

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First published: 1989 1 language
Subjects
Ion implantation Silicon Amorphous substances Germanium Diffusion Multilayered Thin films

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